AO4412 N-Channel Enhancement Mode Field Effect Transistor General Description w ww.
com provide Features VD S (V) = 30V ID = 8.
5A (V GS = 10V) RDS( ON) < 26mΩ (VGS = 10V) RDS(ON) < 34m� �� (VGS = 4.
5V) The AO4412 uses advanced trench technology to excellent RDS(O N) and ultra-low gate charge for use has a fast high side switch.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard product AO4412 is Pb-free (meets R OHS & Sony 259 specifications).
AO4412L is a Green Product ordering option.
AO 4412 and AO4412L a .
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